NIST X-ray Photoelectron Spectroscopy Database

Click the column to sort in ascending or descending order.
Enter a string in the input box in the column header and press the enter to filter the search result in the selected column.
Click on the hyperlink in the column for more information.

Total Records: 17

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

O₂/GaAs

CS-3d

3.20

O₂/GaAs

CS-3d

0.00

O₂/Y/GaAs

CS-3d

3.50

O₂/Y/GaAs

CS-3d

0.00

O₂/GaAs

CS-3d

3.20

O₂/GaAs

CS-3d

0.00

O₂/Y/GaAs

CS-3d

3.50

O₂/Y/GaAs

CS-3d

1.30

3d_5/2

154.00

Y/GaAs

3d_5/2

156.40

Y/GaAs

3d_5/2

156.40

GaAs

41.00

GaAs/Y

40.30

GaAs/Y

39.60

GaAs

19.00

GaAs/Y

18.00

GaAs/Y

17.00

Data Processing:

Photoelectron Line

18.00

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

0.8 ML Y/GaAs(100). n-type Si-doped GaAs with a carrier concentration of 1E16 cm-3. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV, j = 10 microamperes/cm2, time = 30 min) and subsequently annealed (T = 723 K, time = 15 min) by indirect ele

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300