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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
GaAs/Y
Name:
gallium arsenide/yttrium
CAS Registry No:
1303-00-0
Class:
arsenide, III-V semiconductor

Citation:
Author Name(s):
Mesarwi A., Ignatiev A.
Journal:
Surf. Sci. 282, 371
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3d
Binding Energy (eV)
40.30
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.8 ML Y/GaAs(100). n-type Si-doped GaAs with a carrier concentration of 1E16 cm-3. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV, j = 10 microamperes/cm2, time = 30 min) and subsequently annealed (T = 723 K, time = 15 min) by indirect ele

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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