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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
O2/GaAs
XPS Formula:
reacted state
Name:
oxygen/gallium arsenide
CAS Registry No:
Class:
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Mesarwi A., Ignatiev A.
Journal:
Surf. Sci. 282, 371
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-3d
Chemical Shift (eV)
3.20
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1.5E5 L O2 were adsorbed onto GaAs(100) at 673 K. The energy is referenced to the bulk state of the As3d line. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV) and annealing (T = 723 K).

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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