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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
B/Si
Name:
boron/silicon
CAS Registry No:
7440-21-3
Class:
element

Citation:
Author Name(s):
Weitering H.H., Chen J., DiNardo N.J., Plummer E.W.
Journal:
Phys. Rev. B 48, 8119
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-2p
Double Separation (eV)
0.61
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
120
Overall Energy Resolution (eV):
0.5
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(111)-(R3xR3)R30-B. The surface was prepared by exposing the clean lightly-doped n-type surface (7x7) with a resistivity of 1 ohm cm to B10H14 and by subsequent annealing (T = 1173 K). Branching ratio = 0.5.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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