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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Al
Formula:
AlSb
Name:
aluminum stibnide
CAS Registry No:
25152-52-7
Class:
III-V semiconductor, stibnide

Citation:
Author Name(s):
Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.
Journal:
Phys. Rev. B 46, 13379
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
79.92
Energy Uncertainty:
0.04
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5000 A AlSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. The film was deposited at the substrate temperature of 803 K. Peak locations: Voigt function

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300
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