Tab Page Summary
III-V semiconductor, stibnide
Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.
10.1103/PhysRevB.46.13379
Instruction: Click the column to sort in ascending or descending order. Enter a string in the input box in the column header and press the enter to filter the search result in the selected column. Click on the hyperlink in the column for more information. Total Records: 3
mixed Gaussian/Lorentzian
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5000 A AlSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. The film was deposited at the substrate temperature of 803 K. Peak locations: Voigt function
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300
Go Back