NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 3

Data Processing:

Photoelectron Line

9.42

0.04

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

25 A ZnTe/5000 A AlSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. The AlSb film was deposited at the substrate temperature of 803 K. The ZnTe layers were grown at either 543 K or 603 K. Peak locations: Voigt function.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300