NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
Ga
GaSb
gallium stibnide
12064-03-8
II-VI semiconductor, III-V semiconductor, stibnide
Citation:
Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.
Phys. Rev. B 46, 13379
Pub Year:
1992
Data Processing:
Photoelectron Line
18.86
0.04
mixed Gaussian/Lorentzian
Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5000 A GaSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. Peak locations: Voigt function.
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300