NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ga

GaAsOx/GaAs

GaAs

gallium arsenide oxides/gallium arsenide

CAS Registry No:

arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Debiemme-Chouvy C., Ballutaud D., Pesant J.C., Etcheberry A.

Appl. Phys. Lett. 62, 2254

Pub Year:

1993

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Total Records: 2

Data Processing:

Photoelectron Line

Line Designation:

3d

Binding Energy (eV)

20.04

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

1.65

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

n-GaAs with a carrier concentration of 2E18 cm-3.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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