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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si
XPS Formula:
dimer up atoms
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor

Citation:
Author Name(s):
Johansson L.S.O., Grehk T.M., Gray S.M., Johansson M., Flodstrom A.S.
Journal:
Nucl. Instruments Methods in Phys. Res. Sec. B 97, 364
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-2p3/2
Surface Core-Level Shift (eV) for the first Layer of Atoms
-0.49
Energy Uncertainty:
0.05
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.265
Lorentzian Width (eV):
0.085

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
130
Overall Energy Resolution (eV):
0.1
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type P-doped Si(100)-(2x1) with a resistivity of 0.67 - 1.33 ohm cm was prepared by resistive heating to 1123 - 1173 K followed by a slow cool down process. Branching ratio = 0.5. The Gaussian and Lorentzian FWHM of the bulk component were 0.195 eV and 0.085 eV, respectively.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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