NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 20

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

GaAs

DS-3d

0.46

DS-2p

0.60

Si/GaAs

99.55

Si/GaAs

99.52

Si/GaAs

99.95

Si/GaAs

99.92

Si/GaAs

99.87

Si/GaAs

99.99

GaAs

18.81

GaAs

18.85

Si/GaAs

99.60

Si/GaAs

99.53

Si/GaAs

99.57

Si/GaAs

99.55

Si/GaAs

99.50

Si/GaAs

99.49

Si/GaAs

99.81

Si/GaAs

99.96

Si/GaAs

100.08

99.67

Data Processing:

Photoelectron Line

18.81

0.04

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.73

Calibration:

FL = Fermi level

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type Si-doped GaAs(001)-(2x4) with a carrier concentration of 5E17 cm-3. Branching ratio = 0.65.The intensity ratio of the Gaussian/Lorentzian components was 60/40. The As cap was desorbed by heating at ~723 K for several minutes. The thickness was measured using a quartz-crystal thickness monitor.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300