Tab Page Summary
rest atoms in the (7x7) reconstruction
element, II-VI semiconductor, IV semiconductor
Weitering H.H., Chen J., DiNardo N.J., Plummer E.W.
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.5
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Lightly doped n-type Si(111)-(7x7) with a resistivity of 1 ohm cm. Branching ratio = 0.5. The relative intensity was 0.04.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
77, 300