NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 19

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

Si/B/K

DS-2p

0.61

B/Si

DS-2p

0.61

Si/K

DS-2p

0.61

DS-2p

0.61

Si/K

INT-2p_3/2

0.17

Si/K

INT-2p_3/2

-0.73

B/Si

INT-2p_3/2

-0.01

Si/B/K

INT-2p_3/2

0.15

Si/B/K

INT-2p_3/2

-1.11

Si/B/K

2p_3/2

99.44

2p_3/2

99.79

2p_3/2

99.31

K/B/Si

19.30

K/B/Si

18.80

K/Si

19.05

K/Si

18.25

Si/K

2p_3/2

99.51

SS1-2p_3/2

0.32

SS2-2p_3/2

-0.76

Data Processing:

Photoelectron Line

2p_3/2

99.44

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.55

Lorentzian Width (eV):

0.194

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

120

Overall Energy Resolution (eV):

0.5

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Saturation coverage of K on Si(111)-(R3xR3)R30-B. The substrate was prepared by exposing he clean lightly-doped n-type surface (7x7) with a resistivity of 1 ohm cm to B10H14 and by subsequent annealing (T = 1173 K). The relative intensity was 0.68. Branching ratio = 0.5.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300