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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ti
Formula:
TiSi2
Name:
titanium disilicide
CAS Registry No:
12039-83-7
Class:
II-VI semiconductor, silicide

Citation:
Author Name(s):
Engquist J., Jansson U.
Journal:
Thin Solid Films 263, 54
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p1/2
Binding Energy (eV)
459.10
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The TiSi2 film with a thickness of 5000 A and a resistivity of 15 microohm cm was deposited on B-doped Si(100) with a resistivity of 6.8 - 9.2 ohm cm.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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