NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

In

InP/Ti

indium phosphide/titanium

CAS Registry No:

22398-80-7

III-V semiconductor, phosphide

Citation:

Author Name(s):

Ji M., Wu J., Ma M., Liu X., Li B., and Xu Z.

Vacuum 43, 1157

Pub Year:

1992

bookAll Records in this Publication

Data Processing:

Chemical Shift

Line Designation:

CS-3d_5/2

Chemical Shift (eV)

-0.85

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

0.65

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

35 A Ti/n-type InP(110). The InP was cleaned by Ar+ ion bombardment (Ep = 2 keV, Ip = 20 microamperes cm-2, time = 10 min) and annealing (T = 723 K, time = 30 min). Emission angle = 15 degrees. The chemical shift is relative to the pure InP.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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