NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
O
O2/Si
oxygen/silicon
7782-44-7
element, IV semiconductor, non-stoichiometric oxide, oxide
Citation:
Borman V.D., Gusev E.P., Lebedinski Y.Y., Troyan V.I.
Phys. Rev. B 49, 5415
Pub Year:
1994
Data Processing:
Photoelectron Line
532.00
Measurement:
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Si(100) was exposed to 600 L O2 at 1020 K. The substrate was cleaned by cycles of Ar+ ion bombardment (Ep = 3.5 keV) and annealing (T = 1100 K).
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300