Tab Page Summary
element, IV semiconductor, non-stoichiometric oxide, oxide
Borman V.D., Gusev E.P., Lebedinski Y.Y., Troyan V.I.
Overall Energy Resolution (eV):
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Si(100) was exposed to 600 L O2 at 1020 K. The substrate was cleaned by cycles of Ar+ ion bombardment (Ep = 3.5 keV) and annealing (T = 1100 K).
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300