NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
Ga
O2/GaAs
oxygen/gallium arsenide
arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide
Citation:
Kaul P., Schutze A., Kohl D., Brauers A., Weyers M.
J. Cryst. Growth 123, 411
Pub Year:
1992
Data Processing:
Chemical Shift
CS-2p3/2
3.80
Measurement:
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
4.5E8 L O2/GaAs(100). Adsorption of O2 was performed at 200 mbar for 5 min at 470, 570 and 670 K and at 200 mbar for 30 min at 570 K.
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300