Reliable (reported energy within 300 eV of a reference energy)
Comment:
1 ML Li/n-type P-doped Si(100)-(2x1) with a resistivity of 0.67 - 1.33 ohm cm. The substrate was prepared by resistive heating to 1123 -1173 K followed by a slow cool down process. The Gaussian FWHM of the bulk component at 300 K and 133 K were 0.66 eV a