NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SiO₂/Si

Si*O₂/Si

silicon dioxide/silicon

CAS Registry No:

7631-86-9

Class:

element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Yamauchi T., Kitamura H., Wakai N., Zaima S., Koide Y., and Yasuda Y.

Journal:

J. Vac. Sci. Technol. A 11, 2619

DOI:

Pub Year:

1993

book All Records in this Publication

Data Processing:

Photoelectron Line

103.20

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

5 A SiO2/p-type Si(100) with a resistivity of 1 to 5 ohm cm.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300