Reliable (reported energy within 300 eV of a reference energy)
Comment:
K2.8C60/n-type GaAs(110). The 130 A C60 sample was grown and doped with K at ~ 460 K with subsequent annealing (T = ~ 480 K, time = 15 - 20 min). The thickness was measured using a quartz-crystal thickness monitor. LEED (1x1) pattern. Fcc structure.