Reliable, with one-point correction of energy scale
Comment:
1 L CH3OH was vaporized at 298 K and deposited onto B-doped p-type Si(111) wafer with a resistivity of 1.6 - 2.1 ohm cm. Substrate temperature = 123 K. The substrate was cleaned by repeating an Ar+ ion bombardment at 298 K and resistive heating at 623 K, then finally annealed at 1273 K for 30 s.