Reliable, with one-point correction of energy scale
Comment:
0.1 L HCHO was deposited onto B-doped p-type Si(111) wafer with a resistivity of 1.6 - 2.1 ohm cm. The C1s spectrum has a tail toward lower binding energy. The substrate was cleaned by repeating an Ar+ ion bombardment at 298 K and resistive heating at 623 K, then finally annealed at 1273 K for 30 s.