NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 18

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

TiSi₂

CS-2p_3/2

0.30

ZrSi₂

CS-3d_5/2

0.30

Hf₃Si₂

CS-4f_7/2

0.30

VSi₂

CS-2p_3/2

0.50

SiO₂/Si

103.20

Si/SiO₂

99.30

Zr/Ta

3d_5/2

178.80

Zr/Ta

3d_3/2

181.10

Zr/SiO₂/Si

3d_5/2

178.90

Zr/SiO₂/Si

3d_3/2

181.20

Si/SiO₂/Zr

99.10

Zr/SiO₂/Si

3d_5/2

179.00

Zr/SiO₂/Si

3d_3/2

182.20

Si/SiO₂/Zr

98.90

Zr/Si

3d_5/2

178.80

Si/Zr

2p_3/2

99.30

Zr/Si

3d_5/2

179.10

Si/Zr

2p_3/2

98.70

Data Processing:

Photoelectron Line

2p_3/2

98.70

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

35 A Zr/Si(100)-(2x1) annealed at 673 K for 40 min. The substrate was p-type Si(100) wafer with a resistivity of 1 to 5 ohm cm.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300