NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 9

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

CaF₂/Sb/GaAs

DS-4d

1.24

CaF₂/Sb/GaAs

DS-3p

0.40

CaF₂/Sb/GaAs

4d_5/2

37.44

CaF₂/Sb/GaAs

4d_5/2

37.15

CaF₂/Sb/GaAs

4d_5/2

36.77

CaF₂/Sb/GaAs

4d_5/2

37.22

CaF₂/Sb/GaAs

4d_5/2

36.80

CaF₂/Sb/GaAs

33.64

CaF₂/Sb/GaAs

29.97

Data Processing:

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3p

Double Separation (eV)

0.40

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1.9 ML CaF2/1 ML Sb/p-GaAs with a carrier concentration of 3E18 cm-3. Branching ratio = 0.5. The thickness was measured using a quartz-crystal thickness monitor.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300