NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ga

O₂/GaAs

Ga₂O₃

oxygen/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Jimenez I., Moreno M., Martin-Gago J.A., Asensio M.C., Sacedon J.L.

J. Vac. Sci. Technol. A 12, 1170

Pub Year:

1994

book All Records in this Publication

Data Processing:

Chemical Shift

Line Designation:

CS-3d_5/2

Chemical Shift (eV)

1.30

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.40

Lorentzian Width (eV):

0.15

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

126.10

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

~1E4 L O2/n and p-type GaAs(111)-(1x1) with carrier concentrations of 3E18 cm-3 and 1.7E18 cm-3, respectively. The thickness of the native oxide was 9 A. Branching ratio = 0.66. The chemical shift is relative to the pure GaAs.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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