There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
InAs
XPS Formula:
three atoms immediately beneath the trimers
Name:
indium(III) arsenide
CAS Registry No:
1303-11-3
Class:
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Author Name(s):
Andersson C.B.M., Karlsson U.O., Hakansson M.C., Olsson L.O., Ilver L., Kanski J., et al.
Journal:
Surf. Sci. 347, 199
DOI:
Pub Year:
1996

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS2-3d5/2
Surface Core-Level Shift (eV) for the second Layer of Atoms
0.28
Energy Uncertainty:
0.030
Background Subtraction Method:
Linear
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
0.155

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
80-155
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type S-doped InAs(-1-1-1)-(2x2) with a carrier concentration of 8.7E16 cm-3. Peak locations: Voigt function. The spectra were recorded at normal emission, 35 and 70 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300
An error has occurred. This application may no longer respond until reloaded. Reload 🗙