NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

As

InAs

one rest atom in the second layer without a bond to trimer

indium(III) arsenide

CAS Registry No:

1303-11-3

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Andersson C.B.M., Karlsson U.O., Hakansson M.C., Olsson L.O., Ilver L., Kanski J., et al.

Surf. Sci. 347, 199

Pub Year:

1996

book All Records in this Publication

Data Processing:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS2-3d_5/2

Surface Core-Level Shift (eV) for the second Layer of Atoms

-0.33

Energy Uncertainty:

0.030

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.155

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

80-155

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type S-doped InAs(-1-1-1)-(2x2) with a carrier concentration of 8.7E16 cm-3. Peak locations: Voigt function. The spectra were recorded at normal emission, 35 and 70 degrees.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300

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