NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

bulk state

silicon

7440-21-3

element, II-VI semiconductor, IV semiconductor

Author Name(s):

Safta N., Lacharme J.P., Cricenti A., Taleb-Ibrahimi A., Indlekofer G., Aristov V., et al.

Journal:

Nucl. Instruments Methods in Phys. Res. Sec. B 97, 372

DOI:

Pub Year:

1995

book All Records in this Publication

Data Type:

Surface Core-level Shift

Line Designation:

SS-2p_3/2

Surface Core-Level Shift (eV):

0.00

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.37

Lorentzian Width (eV):

0.035

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

116

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si(110)-(2x8). The sample was cleaned by annealing at ~ 1173 K. FAT mode. The spectra were recorded at normal emission. Branching ratio = 0.50.

Specimen:

crystal, semiconductor, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300