There was a problem with the connection!
menu
NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Summary Page
One Page Summary
Instruction:
Click on selected Tab for more information.
General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si
XPS Formula:
surface state
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor
Author Name(s):
Safta N., Lacharme J.P., Cricenti A., Taleb-Ibrahimi A., Indlekofer G., Aristov V., et al.
Journal:
Nucl. Instruments Methods in Phys. Res. Sec. B 97, 372
DOI:
110.1016/0168-583X(94)00355-6
Pub Year:
1995
keyboard_arrow_down
book
All Records in this Publication
Instruction:
Click the column to sort in ascending or descending order.
Enter a string in the input box in the column header and press the enter to filter the search result in the selected column.
Click on the hyperlink in the column for more information.
Total Records:
14
Element
Atomic No
Formula
Spectral Line
Energy (eV)
Details
Si
14
Si
DS-2p
0.61
Si
14
Si
SS-2p
3/2
0.00
Si
14
Si
SS-2p
3/2
0.00
Si
14
Si
SS-2p
3/2
-0.44
Si
14
Si
SS1-2p
3/2
0.70
Si
14
Si
SS1-2p
3/2
0.76
Si
14
Si
SS2-2p
3/2
0.20
Si
14
Si
SS2-2p
3/2
0.20
Si
14
Si
SS3-2p
3/2
-0.15
Si
14
Si
SS3-2p
3/2
-0.15
Si
14
Si
SS4-2p
3/2
-0.40
Si
14
Si
SS4-2p
3/2
-0.40
Si
14
Si
SS5-2p
3/2
-0.89
Si
14
Si
SS5-2p
3/2
-0.89
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-2p
3/2
Surface Core-Level Shift (eV) for the first Layer of Atoms:
0.70
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.55
Lorentzian Width (eV):
0.035
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
151
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(110)-(2x8). The sample was cleaned by annealing at ~ 1173 K. FAT mode. The spectra were recorded at normal emission. Branching ratio = 0.61.
Specimen:
crystal, semiconductor, wafer
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
Go Back
home
Home
keyboard_arrow_down
search
Identify Unknown Spectral Lines
keyboard_arrow_down
search
Retrieve Data for Elements
keyboard_arrow_down
Selected Spectral Type and Element
keyboard_arrow_down
Reference Data
keyboard_arrow_down
search
Retrieve Data for Compounds
keyboard_arrow_down
Elemental Composition
keyboard_arrow_down
Chemical Name
keyboard_arrow_down
Chemical Classes
keyboard_arrow_down
Data for One Element
keyboard_arrow_down
assessment
Plots
keyboard_arrow_down
Wagner Plot
keyboard_arrow_down
Chemical Shifts
keyboard_arrow_down
search
Search Scientific Citations
keyboard_arrow_down
assignment
More Options
keyboard_arrow_down
Introduction
keyboard_arrow_down
Data Field Definitions
keyboard_arrow_down
Citation
keyboard_arrow_down
Contact
keyboard_arrow_down
Version History
keyboard_arrow_down
Acknowledgement
keyboard_arrow_down
Disclaimer
keyboard_arrow_down
An error has occurred. This application may no longer respond until reloaded.
Reload
🗙
