NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 33

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

As/Si

CS-2p_3/2

0.40

As/Si

CS-2p_3/2

1.00

O₂/As/Si

CS-2p_3/2

1.80

O₂/As/Si

CS-2p_3/2

2.57

O₂/As/Si

CS-2p_3/2

3.44

O₂/As/Si

CS-2p_3/2

1.80

O₂/As/Si

CS-2p_3/2

2.54

O₂/As/Si

CS-2p_3/2

3.25

O₂/As/Si

CS-2p_3/2

0.00

O₂/As/Si

CS-2p_3/2

0.40

O₂/As/Si

CS-2p_3/2

1.00

O₂/As/Si

CS-2p_3/2

0.00

O₂/As/Si

CS-2p_3/2

0.40

O₂/As/Si

CS-2p_3/2

1.04

O₂/As/Si

CS-2p_3/2

0.00

O₂/As/Si

CS-2p_3/2

0.41

O₂/As/Si

CS-2p_3/2

1.00

O₂/As/Si

CS-3d_5/2

0.40

O₂/As/Si

CS-3d_5/2

1.21

O₂/As/Si

CS-3d_5/2

2.61

O₂/As/Si

CS-3d_5/2

3.89

As/Si

CS-2p_3/2

0.00

As/Si

CS-2p_3/2

0.40

As/Si

CS-2p_3/2

1.02

O₂/As/Si

CS-3d_5/2

0.40

O₂/As/Si

CS-3d_5/2

1.18

O₂/As/Si

CS-3d_5/2

2.52

O₂/As/Si

CS-3d_5/2

3.62

O₂/As/Si

3d_5/2

41.48

As/Si

3d_5/2

41.48

Photoelectron Line

3d_5/2

41.48

0.04

Background Subtraction Method:

Shirley

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.52

Lorentzian Width (eV):

0.16

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

145

Overall Energy Resolution (eV):

0.30

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1.4E13 L O2/As/Si. B-doped Si(001)-(2x1) with a resistivity between 0.076 and 0.1ohm cm was exposed to an As4 flux at 623 and 773 K under a pressure of about 1E-6 Torr. LEED pattern was (2x1) after As deposition. The relative intensity was 0.240.

Specimen:

crystal, heated and cooled, molecular beam epitaxy, oxygen pressure, reacted

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300