NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ge

Ge

bulk state

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Author Name(s):

Goldoni A., Modesti S., Dhanak V.R., Sancrotti M., Santoni A.

Phys. Rev. B 54, 11340

Pub Year:

1996

book All Records in this Publication

Photoelectron Line

Line Designation:

3d_3/2

Binding Energy (eV):

29.82

Energy Uncertainty:

0.02

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.34

Lorentzian Width (eV):

0.15

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

45/70

Overall Energy Resolution (eV):

0.23

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-Ge(100)-(2x1). The sample was prepared by cycles of Ar+ ion bombardment and annealing (T = 1000 K) followed by slow cooling to 300 K. The spectra were recorded at normal emission and 70 degrees. Branching ratio = 0.66+-0.03.

crystal, semiconductor, sputtered and heated, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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