NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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C

C₆₀/Si

(C(60)-I(h)[5,6]fullerene/silicon

CAS Registry No:

135105-52-1

element

Author Name(s):

Vasquez R.P., Brain R.A., Ross D., Yeh N.-C.

Surf. Sci. Spectra 1, 242

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

Line Designation:

1s

Binding Energy (eV):

284.80

Energy Uncertainty:

Background Subtraction Method:

Shirley

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

0.57

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Cu = 84.00,932.67

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

~ 100 nm C60 were grown by thermal evaporation on Si(111) at 333 K. The substrate was HF etched immediately prior to film growth. FAT mode. The spectra were recorded at normal emission. The intensity ratio of the Gaussian/Lorentzian components was 70/30.

fullerene, polycrystalline, semiconductor, thin film, vapor deposited

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

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