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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor
Author Name(s):
Ley L., Wang Y., Van V.N., Fisson S., Souche D., Vuye G., et al.
Journal:
Thin Solid Films 270, 561
DOI:
10.1016/0040-6090(95)06860-0
Pub Year:
1995
book
All Records in this Publication
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-2p
Double Separation (eV):
0.60
Energy Uncertainty:
Background Subtraction Method:
Shirley
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.8
Calibration:
Pt4f7 = 71.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Branching ratio = 0.5
Specimen:
crystal, semiconductor
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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