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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
In
Formula:
InAs
Name:
indium(III) arsenide
CAS Registry No:
1303-11-3
Class:
arsenide, II-VI semiconductor, III-V semiconductor
Author Name(s):
Poirier D.M., Weaver J.H.
Journal:
Surf. Sci. Spectra 2, 224
DOI:
10.1116/1.1247703
Pub Year:
1993
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
4d
5/2
Binding Energy (eV):
17.38
Energy Uncertainty:
Background Subtraction Method:
Shirley
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
0.69
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Cu = 84.00,932.67
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with two-point correction of energy scale
Comment:
InAs(110), zinc blende structure. FAT mode. Emission angle = 55 degrees.
Specimen:
cleaved crystal, crystal, semiconductor, vacuum cleaved, wafer
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
295
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