NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ti

TiSi₂

titanium disilicide

CAS Registry No:

12039-83-7

II-VI semiconductor, silicide

Author Name(s):

Engquist J., Jansson U.

Thin Solid Films 263, 54

Pub Year:

1995

book All Records in this Publication

Photoelectron Line

Line Designation:

2p_3/2

Binding Energy (eV):

453.10

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

5000 A TiSi2 with a resistivity of 15 microohm cm were deposited on B-doped Si(100) with a resistivity of 6.8 - 9.2 ohm cm and annealed (T= 1100 K, time = 4 min).

annealed, chemical vapor deposition, semiconductor, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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