Anode Material:
other source
Overall Energy Resolution (eV):
0.30
Charge Reference:
Element
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
n-type P-doped Si(001) and Si(111) surfaces with a resistivity of 0.002 - 0.005 ohm cm were exposed to 90 L O2 at 875 K. The wafer was cleaned by heating (T = 1325 K, time = 15 s). The spectra were recorded at normal emission. Branching ratio = 0.5.
crystal, oxidizing atmosphere, oxygen pressure, thermal oxide, wafer
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
