NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ge

Ge

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Author Name(s):

Dhanak V.R., Goldoni A., Sancrotti M., Modesti S., Santoni A.

J. Electron Spectrosc. Relat. Phenom. 80, 45

Pub Year:

1996

book All Records in this Publication

Surface Core-level Shift

Line Designation:

SS-3d_5/2

Surface Core-Level Shift (eV):

-0.75

Energy Uncertainty:

0.01

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.35

Lorentzian Width (eV):

0.14

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

70

Overall Energy Resolution (eV):

0.27

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type Sb-doped Ge(111)c(2x8) with a resistivity of 0.1 ohm cm. The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 1100 K). Branching ratio = 0.581.

crystal, semiconductor, sputtered and heated

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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