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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor
Author Name(s):
Scholz S.M., Jacobi K.
Journal:
Surf. Sci. 369, 117
DOI:
10.1016/S0039-6028(96)00882-5
Pub Year:
1996
book
All Records in this Publication
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-2p
Double Separation (eV):
0.60
Energy Uncertainty:
Background Subtraction Method:
Linear
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
135
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(113)-(3x2). FAT mode. The spectra were recorded at normal emission and 40 degrees. Branching ratio = 0.52.
Specimen:
crystal, wafer
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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