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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Ge
Formula:
Ge
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor
Author Name(s):
Kibel M.H., Leech P.W.
Journal:
Surf. Interface Anal. 24, 605
DOI:
10.1002/(SICI)1096-9918(19960916)24:9<605::AID-SIA161>3.0.CO;2-K
Pub Year:
1996
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
3d
Binding Energy (eV):
29.40
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The sample was cleaned by Ar+ ion bombardment (Ep = 5 keV, j =~ 2 microamperes cm-2, time = 2 min). FAT mode.
Specimen:
semiconductor, sputtered
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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