NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 20

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

L₃M₄₅M₄₅(¹G)

1145.20

GeO₂

L₃M₄₅M₄₅(¹G)

1137.90

Si₀.₃₈₀Ge₀.₀₅O₀.₆₁₅

L₃M₄₅M₄₅(¹G)

1137.20

Si₀.₃₉₇Ge₀.₉O₀.₅₉₄

L₃M₄₅M₄₅(¹G)

1136.60

Si₀.₂₉₇Ge₀.₁₁₅O₀.₅₈₈

L₃M₄₅M₄₅(¹G)

1137.20

SiO₂

533.20

GeO₂

532.30

Si₀.₃₈₀Ge₀.₀₅O₀.₆₁₅

533.10

Si₀.₃₉₇Ge₀.₉O₀.₅₉₄

532.70

Si₀.₂₉₇Ge₀.₁₁₅O₀.₅₈₈

533.70

98.90

SiO₂

103.80

Si₀.₃₈₀Ge₀.₀₅O₀.₆₁₅

103.80

Si₀.₃₉₇Ge₀.₉O₀.₅₉₄

103.50

Si₀.₂₉₇Ge₀.₁₁₅O₀.₅₈₈

104.50

Si₀.₂₉₇Ge₀.₁₁₅O₀.₅₈₈

33.50

Si₀.₃₉₇Ge₀.₉O₀.₅₉₄

33.60

Si₀.₃₈₀Ge₀.₀₅O₀.₆₁₅

33.30

GeO₂

33.10

29.40

Photoelectron Line

533.70

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The Ge-doped layers were formed by flame PECVD. The sample was cleaned by Ar+ ion bombardment (Ep = 5 keV, j =~ 2 microamperes cm-2, time = 2 min). FAT mode.