Comment:
The thickness was 16 ML. The Cu(100) substrate was cleaned by Ar+ ion bombardment (Ep = 3 keV, j = 10 microamperes cm-2 T = 723 K) and annealing (T = 873 K). The Cu(100) crystal was maintained at ~403 K during the deposition. FAT mode. The intensity ratio of the Gaussian/Lorentzian components was 90/10. The thickness was measured using a quartz-crystal thickness monitor.