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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
In
Formula:
In
2
Te
3
Name:
indium (III) telluride
CAS Registry No:
1312-45-4
Class:
chalcogenide, II-VI semiconductor, telluride
Author Name(s):
Tkalich A.K., Demin V.N., Zlomanov V.P.
Journal:
J. Solid State Chem. 116, 33
DOI:
10.1006/jssc.1995.1178
Pub Year:
1995
book
All Records in this Publication
Data Type:
Chemical Shift
Line Designation:
CS-AP-3d
5/2
,M4N45N45
Chemical Shift (eV):
-0.60
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Ag3d5 = 368.27
Charge Reference:
Element
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The sample was cleaned by Ar+ ion bombardment (Ep = 800 eV).
Specimen:
crystal, semiconductor, sputtered
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300
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