NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

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Element:

InAs

indium(III) arsenide

1303-11-3

arsenide, II-VI semiconductor, III-V semiconductor

Author Name(s):

Varekamp P.R., Hakansson M.C., Kanski J., Shuh D.K., Bjorkqvist M., Gothelid M., et al

Journal:

Phys. Rev. B 54, 2101

DOI:

Pub Year:

1996

book All Records in this Publication

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS2-4d_5/2

Surface Core-Level Shift (eV) for the second Layer of Atoms:

0.24

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.13

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

79.82

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

InAs(001)-c(8x2). The spectra were recorded at normal emission.

Specimen:

crystal, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300