NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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One Page Summary

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Element:

SiC

silicon carbide

409-21-2

carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Author Name(s):

Kennou S.

Journal:

J. Appl. Phys. 78, 587

DOI:

Pub Year:

1995

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Photoelectron Line

281.30

0.1

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

SiC(0001). The sample was cleaned by Ar+ ion bombardment (Ep = 1.5 keV, Ip = 2 microamperes) and subsequently annealed (T = ~1000 K). FAT mode.

Specimen:

alpha phase, crystal, semiconductor, sputtered and heated

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300