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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
In
Formula:
InAs
Name:
indium(III) arsenide
CAS Registry No:
1303-11-3
Class:
arsenide, II-VI semiconductor, III-V semiconductor
Author Name(s):
Zborowski J.T., Vigliante A., Moss S.C., Golding T.D
Journal:
J. Appl. Phys. 79, 8379
DOI:
10.1063/1.362557
Pub Year:
1996
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
4d
Binding Energy (eV):
16.90
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The film thickness was 2000 A.
Specimen:
crystal, molecular beam epitaxy, semiconductor, thin film
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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