NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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C

C₂H₄/Si

carbide state

ethylene/silicon

CAS Registry No:

74-85-1

carbide, element, hydrocarbon

Author Name(s):

Takagaki T., Igari Y., Takaoka T., Kusunoki I.

Appl. Surf. Sci. 92, 287

Pub Year:

1996

book All Records in this Publication

Photoelectron Line

Line Designation:

1s

Binding Energy (eV):

282.80

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Si2p3 = 99.34

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

C2H4 flux 2.7E15 molecules cm-2 s-1/Si(100) ) with a resistivity of 10 - 20 ohm cm (T = 1123 K, time = 30 min). The C/Si intensity ratio determined by XPS was 0.5. Branching ratio = 0.5.

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