NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

InAs

indium(III) arsenide

CAS Registry No:

1303-11-3

arsenide, II-VI semiconductor, III-V semiconductor

Author Name(s):

Andersson C.B.M., Olsson L.O, Hakansson M.C., Ilver L., Karlsson U.O., and Kanski J.

J. Phys. IV 4, C9-209

Pub Year:

1994

book All Records in this Publication

Doublet Separation for Photoelectron Lines

Line Designation:

DS-4d

Double Separation (eV):

0.86

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

105

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type S-doped InAs(111)-(2x2). Peak locations: Voigt function. The spectra were recorded at normal emission and 60 degrees, the branching ratios were 0.85 and 0.73, respectively.

crystal, molecular beam epitaxy, semiconductor, sputtered and heated

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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