NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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As
InAs
indium(III) arsenide
1303-11-3
arsenide, II-VI semiconductor, III-V semiconductor
Andersson C.B.M., Olsson L.O, Hakansson M.C., Ilver L., Karlsson U.O., and Kanski J.
J. Phys. IV 4, C9-209
Pub Year:
1994
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Doublet Separation for Photoelectron Lines
DS-3d
mixed Gaussian/Lorentzian
Anode Material:
other source
X-ray Energy:
105
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type S-doped InAs(111)-(2x2). Peak locations: Voigt function. The spectra were recorded at normal emission and 60 degrees, the branching ratios were 0.66 and 0.65, respectively.
crystal, molecular beam epitaxy, semiconductor, sputtered and heated
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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