NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

InAs

indium(III) arsenide

CAS Registry No:

1303-11-3

arsenide, II-VI semiconductor, III-V semiconductor

Author Name(s):

Andersson C.B.M., Olsson L.O, Hakansson M.C., Ilver L., Karlsson U.O., and Kanski J.

J. Phys. IV 4, C9-209

Pub Year:

1994

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-4d_3/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

-0.29

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.41

Lorentzian Width (eV):

0.175

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

105

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type S-doped InAs(-1-1-1)-(1x1). Peak locations: Voigt function. The spectra were recorded at normal emission and 60 degrees, the branching ratios were 0.81 and 0.78, respectively. The intensity ratios of the surface/bulk components were 0.23 and 0.91, respectively.

crystal, molecular beam epitaxy, semiconductor, sputtered and heated

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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