NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

In₀.₇Ga₀.₃As

In*₀.₇Ga₀.₃As

indium gallium arsenide alloy (0.7-0.3-1)

CAS Registry No:

alloy, arsenide, III-V semiconductor

Author Name(s):

Hwang J., Pianetta P., Shih C.K., Spicer W.E., Pao Y. -C., and Harris J.S, Jr.

Appl. Phys. Lett. 51, 1632

Pub Year:

1987

book All Records in this Publication

Photoelectron Line

Line Designation:

4d_3/2

Binding Energy (eV):

17.75

Energy Uncertainty:

0.05

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

30

Overall Energy Resolution (eV):

0.3

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The InGaAs alloy was grown with thicknesses ranging from 400 A to 2000 A. InGaAs(001)-c(4x4). The VBMin is located by extrapolating the leading edge of the valence band.

crystal, molecular beam epitaxy, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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