NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 14

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

GaAs

3d_5/2

18.61

GaAs

3d_3/2

19.05

In₀.₂Ga₀.₈As

3d_5/2

18.62

In₀.₂Ga₀.₈As

3d_3/2

19.06

In₀.₇Ga₀.₃As

3d_5/2

18.68

In₀.₇Ga₀.₃As

3d_3/2

19.12

In₀.₉Ga₀.₁As

3d_5/2

18.72

In₀.₉Ga₀.₁As

3d_3/2

19.16

In₀.₂Ga₀.₈As

4d_5/2

16.83

In₀.₂Ga₀.₈As

4d_3/2

17.69

In₀.₇Ga₀.₃As

4d_5/2

16.89

In₀.₇Ga₀.₃As

4d_3/2

17.75

In₀.₉Ga₀.₁As

4d_5/2

16.90

In₀.₉Ga₀.₁As

4d_3/2

17.76

Photoelectron Line

3d_3/2

19.16

0.05

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.3

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The InGaAs alloy was grown with thicknesses ranging from 400 A to 2000 A. InGaAs(001)-c(4x4). The VBMin is located by extrapolating the leading edge of the valence band.